d2000ts (koto) ta-2940 no.6538-1/4 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel silicon mosfet ultrahigh-speed switching applications ordering number:enn6538 5LN02N sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan specifications absolute maximum ratings at ta = 25?c electrical characteristics at ta = 25?c package dimensions unit:mm 2178 [5LN02N] features low on-resistance. ultrahigh-speed switching. 2.5v drive. 1 : source 2 : drain 3 : gate sanyo : np ?c ?c marking : ye continued on next page. 5.0 4.0 0.5 0.6 2.0 14.0 5.0 0.45 0.45 4.0 0.44 1.3 1.3 123 r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e c r u o s - o t - n i a r dv s s d 0 5v e g a t l o v e c r u o s - o t - e t a gv s s g 0 1 v ) c d ( t n e r r u c n i a r di d 2 . 0a ) e s l u p ( t n e r r u c n i a r di p d w p e l c y c y t u d , s 0 1 % 18 . 0a n o i t a p i s s i d r e w o p e l b a w o l l ap d 4 . 0w e r u t a r e p m e t l e n n a h ch c t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 C r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n w o d k a e r b e c r u o s - o t - n i a r dv s s d ) r b ( i d v , a m 1 = s g 0 =0 5v t n e r r u c n i a r d e g a t l o v e t a g - o r e zi s s d v s d v , v 0 5 = s g 0 =0 1a t n e r r u c e g a k a e l e c r u o s - o t - e t a gi s s g v s g v , v 8 = s d 0 =0 1 a e g a t l o v f f o t u cv s g ) f f o (v s d i , v 0 1 = d a 0 0 1 =4 . 03 . 1v e c n a t t i m d a r e f s n a r t d r a w r o f| s f y |v s d i , v 0 1 = d a m 0 0 1 =4 3 . 09 4 . 0s e c n a t s i s e r e t a t s - n o e c r u o s - o t - n i a r d c i t a t s r s d 1 ) n o (i d v , a m 0 0 1 = s g v 4 =9 . 14 . 2 w r s d 2 ) n o (i d v , a m 0 5 = s g v 5 . 2 =2 . 23 w r s d 3 ) n o (i d v , a m 0 1 = s g v 5 . 1 =2 . 34 . 6 w
no.6538-2/4 5LN02N switching time test circuit continued from preceding page. pw=10 s d.c. 1% 4v 0v v in p. g 50 g d i d =100ma r l =250 v dd =25v v out 5LN02N s v in r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e c n a t i c a p a c t u p n is s i cv s d z h m 1 = f , v 0 1 =5 2f p e c n a t i c a p a c t u p t u os s o cv s d z h m 1 = f , v 0 1 =2 1f p e c n a t i c a p a c r e f s n a r t e s r e v e rs s r cv s d z h m 1 = f , v 0 1 =5 . 4f p e m i t y a l e d n o - n r u tt d ) n o (t i u c r i c t s e t d e i f i c e p s e e s5 2s n e m i t e s i rt r t i u c r i c t s e t d e i f i c e p s e e s5 7s n e m i t y a l e d f f o - n r u tt d ) f f o (t i u c r i c t s e t d e i f i c e p s e e s0 5 3s n e m i t l l a ft f t i u c r i c t s e t d e i f i c e p s e e s0 7 1s n e g r a h c e t a g l a t o tg qv s d v , v 0 1 = s g i , v 0 1 = d a m 0 0 2 =8 1 . 2c n e g r a h c e c r u o s - o t - e t a gs g qv s d v , v 0 1 = s g i , v 0 1 = d a m 0 0 2 =8 2 . 0c n e g r a h c " r e l l i m " n i a r d - o t - e t a gd g qv s d v , v 0 1 = s g i , v 0 1 = d a m 0 0 2 =5 4 . 0c n e g a t l o v d r a w r o f e d o i dv d s i s v , a m 0 0 2 = s g 0 =3 8 . 02 . 1v 0 0.5 1.0 1.5 2.0 2.5 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 i d -- v gs v ds =10v 0 0 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0.20 0.2 0.10 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 i d -- v ds v gs =1.5v 3.5v 6.0v 2.0v 2.5v 4.0v 3.0v 0.01 1.0 0.1 23 57 23 5 10 7 5 3 2 r ds (on) -- i d v gs =4v 012 6 34 5 6 2 1 0 3 4 5 78910 r ds (on) -- v gs ta=25 c i d =100ma 50ma ta=75 c 25 c --25 c 75 c ta= --25 c it00274 it00275 it00276 it00277 25 c drain current, i d ? drain-to-source voltage, v ds ? drain current, i d ? gate-to-source voltage, v gs ? gate-to-source voltage, v gs ? static drain-to-source on-state resistance, r ds (on) w static drain-to-source on-state resistance, r ds (on) w drain current, i d ?
no.6538-3/4 5LN02N 0.01 0.1 0.1 23 57 23 57 1.0 7 5 3 2 1.0 ? y fs ? -- i d v ds =10v --60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 --40 --20 0 20 40 60 80 100 120 140 160 r ds (on) -- ta i d =50ma, v gs =2.5v i d =100ma, v gs =4.0v 75 c 25 c ta= --25 c it00280 it00281 0 0 1 2 3 4 5 6 7 8 2.5 1.5 2.0 0.5 1.0 9 10 v gs -- qg v ds =10v i d =200ma 0 1.0 5 10 10 15 100 7 5 3 2 7 5 3 2 20 50 25 30 35 40 45 ciss, coss, crss -- v ds f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1.0 7 5 3 2 7 5 3 2 i f -- v sd v gs = 0 0.01 10 0.1 23 57 23 1000 100 7 5 3 2 7 5 3 2 sw time -- i d v dd =25v v gs =4v ta=75 c 25 c -- 2 5 c ciss coss crss t d (on) t d (off) t r t f it00282 it00283 it00284 it00285 0.01 1.0 0.1 23 57 23 5 10 7 5 3 2 r ds (on) -- i d v gs =2.5v 0.001 1.0 0.01 23 57 23 5 10 7 5 3 2 r ds (on) -- i d v gs =1.5v ta=75 c 25 c --25 c ta=75 c 25 c --25 c it00278 it00279 forward transfer admittance, | y fs| s drain current, i d ? ambient temperature, ta ?c static drain-to-source on-state resistance, r ds (on) w static drain-to-source on-state resistance, r ds (on) w drain current, i d ? static drain-to-source on-state resistance, r ds (on) w drain current, i d ? forward current, i f ? diode forward voltage, v sd ? switching time, sw time ns drain current, i d ? ciss, coss, crss pf drain-to-source voltage, v ds ? gate-to-source voltage, v gs v total gate charge, qg nc
ps no.6538-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2000. specifications and information herein are subject to change without notice. 5LN02N 0 20 40 60 100 120 140 0 80 0.5 0.4 0.3 0.1 0.2 160 p d -- ta it01996 allowable power dissipation, p d ? ambient temperature, ta ?c note on usage : since the 5LN02N is designed for high-speed switching applications, please avoid using this device in the vicin ity of highly charged objects.
|
